Renesas Technology
Product Type
MOSFET
1Family
IRF830
1Length
10.4 mm
1Height
9.15 mm
1Width
4.6 mm
1Mounting
Through Hole
2Minimum Operating Temperature
0°C
1-65°C
1Maximum Operating Temperature
150°C
170°C
1Packaging
Bulk
1Package
DIP-16
2DIP-20
1FDIP-32
1TO-220-3
1Input Voltage
5V
1Typical Input Capacitance @ Vds
610pF@25V
1Output Power
100W
1Output Type
NPN
1Output Enable Access Time
60ns
1Reprogramming Technique
UV
1Maximum Drain Source Voltage
500 V
1Transistor Polarity
N
1Channel Mode
N-Channel Enhancement
1Category
Power MOSFET
1Typical Rise Time
8ns
1100 us
1Maximum Drain Source Resistance
1.5 Ohms@10V
1Power Dissipation
100 W
1120 mW
1Peak Non-Repetitive Surge Current
18A
1Organization
512Kx8
1Typical Turn-Off Delay Time
7ns
1Maximum Reverse Current
50uA
1Maximum Random Access Time
120ns
1Detector Maximum Collector Current
160 mA
1Typical Fall Time
5ns
1100 us
1Typical Turn-On Delay Time
11.5ns
1Emitter Maximum Forward Current
50 mA
1Programming Voltage
12.5V
1Number of Channels
4
1Peak Reverse Recovery Time
15ns
1Interface Type
Parallel
1Detector Maximum Collector Voltage
40 V
1Repetitive Peak Reverse Voltage
500VDC
1Typical Gate Charge @ Vgs
22nC@10V
1Configuration
Single
1Maximum Gate Source Voltage
±20V
1Maximum Operating Current
100mA
1Maximum Forward Voltage
500VDC
1Pins
3
1Channel Type
N
1Screening Level
Commercial
1Maximum Continuous Drain Current
4.5 A
1Number of Elements per Chip
1
1Memory Density
4Mbit
1Minimum Isolation Voltage
5300 Vrms
1Emitter Maximum Forward Voltage
1.4 V
1Maximum Forward Current
4.5A
1Showing:1 - 6 of 6
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