Bipolar Transistor (BJT) NPN Darlington 100V 8A 2W TO-220AB

Specifications

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5 V @ 80 mA, 8 A
  • Current - Collector Cutoff (Max): 50 µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3 A, 4 V
  • Power - Max: 2 W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Supplier Package: TO-220AB


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Product Identification

Product Type:Darlington BJT
Family:TIP

Dimensions & Appearance

Length:10.28 mm
Width:4.82 mm
Height:9.28 mm
Mounting:Through Hole

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-65°C

Packaging

Packaging:Rail
Package:TO-220-3

Features

Number of Elements per Chip:1
Pins:3
Transistor Polarity:NPN - Darlington
Maximum Collector Cut-off Current:50uA
Maximum Emitter Base Voltage:5V
Maximum Collector Base Voltage:100 V
Maximum Collector Emitter Voltage:100 V
Maximum Collector Current:8A
Maximum Base Emitter Saturation Voltage:2.8V@8A
Configuration:Single
Maximum Collector Emitter Saturation Voltage:2V@6mA@3A, 2.5V@80mA@8A
Minimum DC Current Gain:2500 @ 4A
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