Transistor N-Channel Power MOSFET 100V 40A

Features:

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 40A
  • Gate-Source Voltage: 20V
  • Power Dissipation:115W
  • Packaging:TO-220-3

Product Identification

Product Type:MOSFET
Family:STP

Dimensions & Appearance

Length:10.54 mm
Width:4.7 mm
Height:8.76 mm
Mounting:Through Hole

Operating conditions

Maximum Operating Temperature:175°C
Minimum Operating Temperature:-55°C

Packaging

Packaging:Bulk
Package:TO-220-3

Input

Typical Input Capacitance @ Vds:1550pf@25V

Output

Output Power:115W

Features

Number of Elements per Chip:1
Channel Type:N
Transistor Polarity:N
Pins:3
Maximum Gate Source Voltage:±20V
Channel Mode:N-Channel Enhancement
Category:Power MOSFET
Maximum Reverse Current:10uA
Maximum Drain Source Resistance:0.035 Ohms@10V
Maximum Drain Source Voltage:100 V
Typical Fall Time:15ns
Peak Non-Repetitive Surge Current:40A
Typical Turn-On Delay Time:17ns
Repetitive Peak Reverse Voltage:100VDC
Typical Gate Charge @ Vgs:55nC@10V
Typical Turn-Off Delay Time:60ns
Maximum Continuous Drain Current:40 A
Peak Reverse Recovery Time:160ns
Typical Rise Time:60ns
Maximum Forward Current:40A
Power Dissipation:115 W
Maximum Forward Voltage:100VDC
Configuration:Single
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