Silicon Plastic Power Transistors

Features:

  • DC current gain specified to 10A
  • Maximum collector-emitter voltage: 60Vdc
  • Maximum collector-base voltage: 70Vdc
  • Maximum emitter-base voltage: 5.0Vdc
  • Maximum collector current: 10Adc
  • Maximum base current: 6.0Adc
  • Maximum power dissipation: 75000mW
  • Operating temperature range: -55°C to 150°C
  • Dimensions: 10.28mm (L) x 4.82mm (W) x 9.28mm (H) (max)

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    • Product Identification

    Product Type:Bipolar Power
    Manufacturer Series:MJE3055

    Dimensions & Appearance

    Mounting:Through Hole
    Length:10.28 mm
    Width:4.82 mm
    Height:9.28 mm

    Operating conditions

    Maximum Operating Temperature:150°C
    Minimum Operating Temperature:-55°C

    Packaging

    Packaging:Rail
    Package:TO-220-3

    Output

    Output Power:75000mW

    Features

    Number of Elements per Chip:1
    Maximum Emitter Base Voltage:1.8V
    Maximum Operating Frequency:2Mhz
    Pins:3
    Transistor Polarity:NPN
    Minimum DC Current Gain:20 @ 4A
    Maximum Collector Base Voltage:70 V
    Maximum Collector Emitter Voltage:60 V
    Maximum Collector Current:10A
    Power Dissipation:75W
    Maximum Collector Emitter Saturation Voltage:1.1V @ 400mA @ 4A, 8V @ 3.3A @ 10A
    Configuration:Single
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