MOSFET N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost contribute to its wide acceptance throughout the industry.

Features

• Dynamic dV/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

Specifications

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Vgs (Max): ±20V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Power Dissipation (Max): 88W (Tc)
• Operating Temperature: -55°C to 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB

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