P-Channel Fast Switching Power MOSFET Transistor
Features:
- Package Type: TO-220
- Drain-to-Source Breakdown Voltage: 200V
- Continuous Drain Current: 6.5A
- Gate-to-Source Voltage: ±20V
- Power Dissipation: 74W
- Input Capacitance: 700pF
- Avalanche Current: 6.4A
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Product Identification
Family:IRF
Product Type:MOSFET
Dimensions & Appearance
Mounting:Through Hole
Length:10.54 mm
Width:4.7 mm
Height:8.76 mm
Operating conditions
Maximum Operating Temperature:150°C
Minimum Operating Temperature:-55°C
Packaging
Packaging:Bulk
Package:TO-220-3
Input
Typical Input Capacitance @ Vds:700pf@25V
Output
Output Power:74W
Features
Number of Elements per Chip:1
Channel Type:P
Pins:3
Maximum Gate Source Voltage:±20V
Category:Power MOSFET
Channel Mode:P-Channel Enhancement
Transistor Polarity:P
Maximum Continuous Drain Current:-6.5 A
Peak Reverse Recovery Time:28ns
Peak Non-Repetitive Surge Current:-26A
Maximum Drain Source Voltage:-200 V
Typical Gate Charge @ Vgs:29nC @10V
Typical Turn-Off Delay Time:28ns
Typical Turn-On Delay Time:12ns
Maximum Forward Current:-6.5A
Typical Rise Time:27ns
Maximum Reverse Current:-500uA
Typical Fall Time:24ns
Repetitive Peak Reverse Voltage:-200VDC
Maximum Drain Source Resistance:0.8 Ohms@10V
Power Dissipation:74 W
Maximum Forward Voltage:-200VDC
Configuration:Single