TRANSISTOR, IRF630, N CHANNEL POWER MOSFET, 200V, 9A, TO-220
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Product Identification
Product Type:MOSFET
Family:IRF630
Dimensions & Appearance
Length:10.4 mm
Width:4.6 mm
Height:9.15 mm
Mounting:Through Hole
Operating conditions
Maximum Operating Temperature:150°C
Minimum Operating Temperature:-65°C
Packaging
Packaging:Tube
Package:TO-220-3
Input
Typical Input Capacitance @ Vds:540pF@25V
Output
Output Power:75W
Features
Number of Elements per Chip:1
Channel Type:N
Transistor Polarity:N
Pins:3
Maximum Gate Source Voltage:±20V
Channel Mode:N-Channel Enhancement
Category:Power MOSFET
Typical Turn-Off Delay Time:17ns
Typical Turn-On Delay Time:10ns
Peak Reverse Recovery Time:20ns
Maximum Continuous Drain Current:9 A
Maximum Reverse Current:50uA
Maximum Drain Source Voltage:200 V
Peak Non-Repetitive Surge Current:36A
Typical Rise Time:15ns
Typical Gate Charge @ Vgs:31nC@10V
Maximum Forward Current:9A
Typical Fall Time:20ns
Repetitive Peak Reverse Voltage:200VDC
Maximum Drain Source Resistance:0.4 Ohms@10V
Power Dissipation:75 W
Maximum Forward Voltage:200VDC
Configuration:Single