Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Specifications

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500 mV @ 5 mA, 50 mA
  • Current - Collector Cutoff (Max): 50 nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10 mA, 5 V
  • Power - Max: 625 mW
  • Frequency - Transition: 300 MHz
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-226-3, TO-92-3 Long Body
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Product Identification

Manufacturer Series:2N5401
Product Type:Bipolar Small Signal

Dimensions & Appearance

Mounting:Through Hole
Width:4.19 mm
Height:5.33 mm
Length:5.20 mm

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-55°C

Packaging

Packaging:Bulk
Package:TO-92-3

Output

Output Power:625mW

Features

Number of Elements per Chip:1
Pins:3
Maximum Collector Emitter Saturation Voltage:0.2V@1mA@10mA, 0.5V@5mA@50mA
Maximum Emitter Base Voltage:5V
Transistor Polarity:PNP
Maximum Collector Current:0.6A
Maximum Base Emitter Saturation Voltage:1V @5mA @50mA
Maximum Operating Frequency:300MHz
Maximum Collector Base Voltage:160 V
Maximum Collector Emitter Voltage:150 V
Minimum DC Current Gain:60 @ .01A
Configuration:Single
Power Dissipation:625mW
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