Silicon NPN Power Transistor TO3

Specifications

  • Type Designator: 2N6254
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 150 W
  • Maximum Collector-Base Voltage (Vcb): 100 V
  • Maximum Collector-Emitter Voltage (Vce): 90 V
  • Maximum Emitter-Base Voltage (Veb): 7 V
  • Maximum Collector Current (Ic max): 15 A
  • Max. Operating Junction Temperature (Tj): 200 °C
  • Transition Frequency (ft): 0.8 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20
  • Package: TO3

Product Identification

Manufacturer Series:2N
Product Type:Silicon Power BJT

Dimensions & Appearance

Mounting:Through Hole
Width:25.75 mm
Height:8.8 mm
Length:39.13 mm

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-65°C

Packaging

Packaging:Bulk
Package:TO-3

Output

Output Power:115W

Features

Number of Elements per Chip:1
Pins:2
Transistor Polarity:NPN
Maximum Emitter Base Voltage:7V
Minimum DC Current Gain:20 @ 5A @ 2V, 5 @ 15A @ 4V
Maximum Collector Base Voltage:80 V
Maximum Collector Emitter Voltage:80 V
Maximum Base Emitter Saturation Voltage:1.5V@5A
Maximum Collector Emitter Saturation Voltage:0.5V @ 0.5A @ 5A
Maximum Collector Current:15A
Power Dissipation:115W
Configuration:Single
,