RF Bipolar (BJT) Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92

Specifications

  • Transistor Type: NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4 mA, 10 V
  • Frequency - Transition: 650 MHz
  • Operating Temperature: -55°C to 150°C (TJ)
  • Current - Collector (Ic) (Max): 50 mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Power - Max: 350 mW
  • Mounting Type: Through Hole
  • Package: TO-92

,