N-Channel IGBT MOSFET Transistor 600V 63A Through Hole TO-247-3
Specifications
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 63 A
- Current - Collector Pulsed (Icm): 252 A
- Vce(on) (Max) @ Vge, Ic: 1. 8V @ 15 V, 30 A
- Power - Max: 208 W
- Switching Energy: 1.05mJ (on), 2.5 mJ (off)
- Input Type: Standard
- Gate Charge: 162 nC
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -40°C to 150°C (TJ)
- Mounting Type: Through Hole
- Package: TO-247-3
- Base Number: ISL9R860
Product Identification
Family:HGTG30
Product Type:IGBT Chip
Dimensions & Appearance
Mounting:Through Hole
Width:15.62 mm
Height:20.57 mm
Length:36.57 mm
Operating conditions
Maximum Operating Temperature:150°C
Minimum Operating Temperature:-40°C
Packaging
Packaging:Tube
Package:TO-247-3
Features
Maximum Gate Emitter Voltage:±20V
Transistor Polarity:N
Pins:3
Maximum Collector Emitter Voltage:600V
Maximum Collector Current:63A
Configuration:Single