MOSFET Transistor N-Channel Enhancement-Mode 35V 1.4A 6.25W TO-220AB

Specifications

  • Transistor Type: N-Channel
  • Number of Elements per Chip: 1
  • Maximum Drain Source Voltage: 35 V
  • Maximum Gate Source Voltage: ±20 V
  • Maximum Continuous Drain Current: 1.4 A
  • Maximum Drain Source Resistance: 1800 mOhm @ 10 V
  • Typical Input Capacitance @ Vds (pF): 35 @ 25 V
  • Power - Max: 6.25 W
  • Frequency - Transition: N/A
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-205AD
  • Base Number: 2N66

Packaging

Package:TO-205AD

Features

Transistor Polarity:N
Maximum Drain Source Voltage:35 V
Maximum Continuous Drain Current:1.4 A
Maximum Gate Source Voltage:±20V
Power Dissipation:6.25 W
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