MOSFET Transistor N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-247AC

Specifications

• Series: HEXFET®
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25 °C: 42 A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10 V
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 23 A, 10 V
• Vgs(th) (Max) @ Id: 4 V @ 250 µA
• Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
• Vgs (Max): ±20 V
• Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
• Power Dissipation (Max): 160 W (Tc)
• Operating Temperature: -55°C to 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC, TO-247-3
• Base Number: IRFP150