On Semiconductor
Product Type
Bipolar Power
1Bipolar Small Signal
4MOSFET
1Zener Diode
2Manufacturer Series
2N2222
1BC557
1PN2222A
1PN2907A
1TIP32
1Family
1N751A
11N5230B
11N5820
12N7002
1Width
1.4 mm
11.91 mm
12 mm
13.93 mm
14.19 mm
24.70 mm
14.83 mm
15.6 mm
1Height
0.96 mm
11.91 mm
12 mm
14.56 mm
14.70 mm
15.33 mm
25.6 mm
19.40 mm
1Length
10.67 mm
13.05 mm
14.2 mm
14.56 mm
14.70 mm
25.20 mm
29.5 mm
1Mounting
Surface Mount
1Through Hole
9Maximum Operating Temperature
150°C
8200°C
2Minimum Operating Temperature
-55°C
6-65°C
4Package
DIP
1DIP-20
1DIP-8
1DO-201AD2
1DO-35
3DO-41
2SOT-23 (SMD)
1TO-220
1TO-220-3
3TO-225AA
1TO-92-3
5Packaging
Bulk
8Typical Input Capacitance @ Vds
50pF @25V
1Voltage Output (V)(Min/Fixed)
5
1-12
1Output Type
Fixed
2Output Current
1 A
2Average Rectified Output Current
1A
23A
1Output Power
0.83W
1625mW
42000mW
1Typical Turn-Off Delay Time
10ns
1Maximum Base Emitter Saturation Voltage
-0.7V@10mA
1-1.8V@-3A@-4V
12V @500mA
22.6V @50mA @500mA
1Maximum Collector Emitter Saturation Voltage
0.075@10mA
10.3V@150mA, 1V@500mA
10.4V@15mA@150mA, 1.6V@50mA@500mA
11V @ 50mA @ 500mA
1-1.2V @375mA @ 3A
1Maximum Drain Source Resistance
7.5 Ohms@10V
1Maximum Collector Emitter Voltage
40 V
245 V
160 V
2Maximum Forward Voltage
0.475 V
11 V
21.2 V
160VDC
1Maximum Operating Frequency
3MHz
1200MHz
1300MHz
2360Mhz
1Transistor Polarity
N
2NPN
2P
1PNP
3Maximum Emitter Base Voltage
5V
1-5V
16V
2-50V
1Maximum Collector Current
0.8A
11A
23A
1-100mA
1Typical Rise Time
10ns
1Power Dissipation
0.5 W
10.5W
240W
1120 W
1350 mW
1625mW
4Category
Small Signal
1Number of Elements per Chip
1
6Application
Fast
1GENERAL PURPOSE
1Schottky Rectifier
1Standard
1Maximum Reverse Current
500uA
12000uA
1Maximum Reverse Leakage Current
1uA
15uA
1Channel Mode
N-Channel Enhancement
1Maximum Forward Current
0.20 A
1300mA
1Pins
2
13
6Maximum Collector Base Voltage
50 V
160 V
275 V
2Repetitive Peak Reverse Voltage
20 V
150 V
275VDC
1100 V
2400 V
1Maximum Drain Gate Voltage
39 V
1Nominal Zener Voltage
4.7
15.1
1Peak Non-Repetitive Surge Current
1.2A
180A
1Typical Gate Charge @ Vgs
30nC@25V
1Typical Fall Time
10ns
1Maximum Gate Source Voltage
±20V
1±25V
1-30 V
1Impedance
17 Ohm
119 Ohm
1Typical Turn-On Delay Time
10ns`
1Maximum Drain Source Voltage
60 V
2Zero-Gate Voltage Drain Current
30 mA
1Typical On-State Current
4 A
1Peak Reverse Recovery Time
10ns
1Channel Type
N
1Maximum Continuous Drain Current
27 A
1115 mA
1Test Current
20 mA
2Configuration
Single
9Minimum DC Current Gain
10 @ 3A
1100 @ .15A
2300 @ 150mA
1800 @ -2A
1Tolerance
5%
2Typical Forward Current
1 A
1Showing:1 - 24 of 126
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