IRLB8721 HEXFET® Power N-Channel MOSFET

Applications & Benefits

  • Optimized for UPS/Inverter applications
  • High frequency synchronous buck converters for computer processor power
  • High frequency isolated DC-DC converters with synchronous rectification for Telecom and Industrial use
  • Very low RDS(on) at 4.5 VGS
  • Ultra-low gate impedance
  • Fully characterized avalanche voltage

Specifications

  • TO-220AB package
  • VDSS: 30V
  • ID: 62A @ TC=25°C, 44A @ TC=100°C
  • RDS(on) max: 8.7mΩ@VGS = 10V
  • Qg (typ.): 7.6nC


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Product Identification

Family:IRLB
Product Type:MOSFET

Dimensions & Appearance

Mounting:Through Hole
Length:10.28 mm
Width:4.57 mm
Height:9.02 mm

Operating conditions

Maximum Operating Temperature:175°C
Minimum Operating Temperature:-55°C

Packaging

Packaging:Bulk
Package:TO-220-3

Input

Typical Input Capacitance @ Vds:1077pf@15V

Output

Output Power:65W

Features

Number of Elements per Chip:1
Channel Type:N
Maximum Drain Source Voltage:30 V
Transistor Polarity:N
Pins:3
Maximum Gate Source Voltage:±20V
Channel Mode:N-Channel Enhancement
Category:Power MOSFET
Typical Turn-Off Delay Time:9ns
Repetitive Peak Reverse Voltage:30VDC
Maximum Reverse Current:1uA
Typical Gate Charge @ Vgs:13nC@15V
Typical Turn-On Delay Time:9.1ns
Typical Fall Time:17ns
Peak Reverse Recovery Time:93ns
Maximum Continuous Drain Current:62 A
Power Dissipation:65 W
Maximum Drain Source Resistance:8.7 Mohms@10V
Peak Non-Repetitive Surge Current:250A
Typical Rise Time:93ns
Maximum Forward Current:62A
Maximum Forward Voltage:30VDC
Configuration:Single
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