Memory 1024-Bit NMOS Static RAM DIP-16

This static random access read/write memory is manufactured using N-channel depletion-mode silicon gate technology. Static storage cells eliminate the need for clocks or refresh circuitry and the resultant cost associated with them.

Features

  • Single 5V supply
  • All inputs and outputs directly DTL/TTL compatible
  • Static operation - no clocks or refresh
  • TRI-STATE output for bus interface
  • All inputs protected against static charge
  • Access time down to 250 ns

Packaging

Package:DIP-16
,