Parallel EEPROM

This is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory with popular, easy-to-use features. The CMOS technology offers fast access times of 120ns at low power dissipation. When the chip is deselected the standby current is less than 100 µA.

Features

• Fast Read Access Time: 150 ns
• Fast Byte Write: 200 µs or 1 ms
• Self-timed Byte Write Cycle
• Low Power, High Reliability
• Supply Voltage: 5V ± 10%
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• DIP-28 configuration (28 pins)