Bipolar Transistor Array (BJT) 7 NPN Darlington 5V 500mA DIP-16

Specifications

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6 V @ 500 µA, 350 mA
  • Current - Collector Cutoff (Max): 50 µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350 mA, 2 V
  • Operating Temperature: -40°C to 85°C (TA)
  • Mounting Type: Through Hole
  • Package: 16-DIP (0.300", 7.62mm)
  • Base Number: ULN2001

Packaging

Package:DIP-16

Features

Transistor Polarity:NPN
Maximum Collector Cut-off Current:50uA
Maximum Emitter Base Voltage:5V
Maximum Collector Emitter Voltage:50 V
Configuration:Array 7
Maximum Collector Base Voltage:n/a
Maximum Collector Current:500mA
Maximum Collector Emitter Saturation Voltage:1.6V@350mA
Minimum DC Current Gain:1000 @ 350mA, 2V
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