Bipolar Junction Transistor (BJT) PNP 60V 4A 40W TO-126
Specifications
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.4 V @ 1 A, 4 A
- Current - Collector Cutoff (Max): 1 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5 A, 2 V
- Power - Max: 40 W
- Frequency - Transition: 2 MHz
- Operating Temperature: -65°C to 150°C (TJ)
- Mounting Type: Through Hole
- Package: TO-225AA, TO-126-3 (TO-126)
Product Identification
Product Type:Bipolar Power
Manufacturer Series:2N5194
Dimensions & Appearance
Height:11.04 mm
Length:2.66 mm
Width:7.74 mm
Mounting:Through Hole
Operating conditions
Maximum Operating Temperature:150°C
Minimum Operating Temperature:-65°C
Packaging
Packaging:Bulk
Package:TO-225-3
Output
Output Power:40W
Features
Number of Elements per Chip:1
Maximum Collector Base Voltage:1.2 V
Maximum Operating Frequency:2Mhz
Pins:3
Maximum Emitter Base Voltage:5V
Transistor Polarity:PNP
Maximum Collector Emitter Voltage:60 V
Minimum DC Current Gain:25 @ 1.5A
Maximum Collector Current:4A
Power Dissipation:40W
Maximum Collector Emitter Saturation Voltage:1.4V@1A,4A
Configuration:Single