Bipolar Junction Transistor (BJT) PNP 50V 100mA 625mW TO-92-3

Specifications

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300 mV @ 1 mA, 10 mA
• Current - Collector Cutoff (Max): 50 nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100 µA, 5 V
• Power - Max: 625 mW
• Frequency - Transition: 40 MHz
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Through Hole
• Package: TO-226-3, TO-92-3 (TO-226AA)
• Base Number: 2N5087