Bipolar Junction Transistor (BJT) PNP 15V 200mA 350mW TO-92-3

Specifications

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 600 mV @ 5 mA, 50 mA
  • Current - Collector Cutoff (Max): 10 nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10 mA, 300 mV
  • Power - Max: 350 mW
  • Frequency - Transition: N/A
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-226-3, TO-92-3 (TO-226AA)

Product Identification

Manufacturer Series:2N5771
Product Type:Bipolar Small Signal

Dimensions & Appearance

Mounting:Through Hole
Width:4.19 mm
Height:5.33 mm
Length:5.21 mm

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-55°C

Packaging

Packaging:Bulk
Package:TO-92-3

Output

Output Power:350mW

Features

Number of Elements per Chip:1
Maximum Collector Base Voltage:15 V
Pins:3
Maximum Collector Emitter Voltage:15 V
Maximum Emitter Base Voltage:4.5V
Transistor Polarity:PNP
Maximum Operating Frequency:8.5Mhz
Minimum DC Current Gain:35 @ 1mA
Maximum Base Emitter Saturation Voltage:1.5V @ 5mA @ 50mA
Maximum Collector Emitter Saturation Voltage:0.6V @ 5mA @ 50mA
Maximum Collector Current:200mA
Power Dissipation:350mW
Configuration:Single
,