Bipolar Junction Transistor (BJT) NPN 50V 100mA TO-92

Specifications

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Power Dissipation: 350 mW
  • Vce Saturation (Max) @ Ib, Ic: n/a
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA
  • Mounting Type: Through Hole
  • Package: TO-92
  • Base Number: MPS-A09

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