Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 625mW Through Hole TO-92

Specifications

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 250 mV @ 10 mA, 100 mA
  • Current - Collector Cutoff (Max): 100 nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 1 V
  • Power - Max: 625 mW
  • Frequency - Transition: 50 MHz
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Base Number: MPSA55

Product Identification

Product Type:Bipolar Small Signal
Manufacturer Series:MPSA

Dimensions & Appearance

Mounting:Through Hole
Height:4.32 mm
Width:4.45 mm
Length:4.32 mm

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-55°C

Packaging

Packaging:Bulk
Package:TO-92-3

Output

Output Power:625mW

Features

Number of Elements per Chip:1
Pins:3
Maximum Emitter Base Voltage:4V
Transistor Polarity:PNP
Maximum Collector Current:0.5A
Maximum Collector Base Voltage:60 V
Maximum Collector Emitter Saturation Voltage:0.25V @ 10mA @ 100mA
Maximum Collector Emitter Voltage:60 V
Maximum Base Emitter Saturation Voltage:1.2V@100mA
Maximum Operating Frequency:N/A
Minimum DC Current Gain:100 @ 100mA
Configuration:Single
Power Dissipation:625mW
,