Bipolar (BJT) Transistor NPN Darlington 80V 8A 2W Through Hole TO-220AB

Specifications

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB

Product Identification

Product Type:Darlington
Manufacturer Series:TIP

Dimensions & Appearance

Mounting:Through Hole
Height:20.15 mm
Length:15.75 mm
Width:5.15 mm

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-65°C

Packaging

Packaging:Bulk
Package:TO-220-3

Output

Output Power:2W

Features

Number of Elements per Chip:1
Pins:3
Transistor Polarity:NPN
Maximum Operating Frequency:4Mhz
Maximum Emitter Base Voltage:5V
Maximum Collector Base Voltage:80 V
Maximum Collector Emitter Voltage:80 V
Maximum Collector Current:15A
Power Dissipation:80W
Minimum DC Current Gain:1000 @ 3A
Configuration:Single
Maximum Collector Emitter Saturation Voltage:2.5V @ 80mA @ 8A
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