Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625mW Through Hole TO-92-3 Formed Leads

Product Identification

Product Type:Bipolar Amplifier
Manufacturer Series:MPSA

Dimensions & Appearance

Mounting:Through Hole
Height:5.20 mm
Length:5.33 mm

Operating conditions

Maximum Operating Temperature:150°C
Minimum Operating Temperature:-55°C

Packaging

Package:TO-92-3 (formed leads)

Output

Output Power:625mW

Features

Number of Elements per Chip:1
Pins:3
Transistor Polarity:NPN
Maximum Emitter Base Voltage:4V
Maximum Collector Current:0.5A
Maximum Collector Base Voltage:60 V
Maximum Collector Emitter Saturation Voltage:0.25V @ 100mA @ 10mA
Maximum Collector Emitter Voltage:60 V
Maximum Operating Frequency:100Mhz
Maximum Base Emitter Saturation Voltage:1.2V @ 100mA @ 1V
Minimum DC Current Gain:100 @ 100mA @ 1V
Configuration:Single
Power Dissipation:625mW
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