Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625mW Through Hole TO-92-3 Formed Leads
Product Identification
Product Type:Bipolar Amplifier
Manufacturer Series:MPSA
Dimensions & Appearance
Mounting:Through Hole
Height:5.20 mm
Length:5.33 mm
Operating conditions
Maximum Operating Temperature:150°C
Minimum Operating Temperature:-55°C
Packaging
Package:TO-92-3 (formed leads)
Output
Output Power:625mW
Features
Number of Elements per Chip:1
Pins:3
Transistor Polarity:NPN
Maximum Emitter Base Voltage:4V
Maximum Collector Current:0.5A
Maximum Collector Base Voltage:60 V
Maximum Collector Emitter Saturation Voltage:0.25V @ 100mA @ 10mA
Maximum Collector Emitter Voltage:60 V
Maximum Operating Frequency:100Mhz
Maximum Base Emitter Saturation Voltage:1.2V @ 100mA @ 1V
Minimum DC Current Gain:100 @ 100mA @ 1V
Configuration:Single
Power Dissipation:625mW