Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625mW Through Hole TO-92

Specifications

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 250 mV @ 10 mA, 100 mA
• Current - Collector Cutoff (Max): 100 nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 1 V
• Power - Max: 625 mW
• Frequency - Transition: 100 MHz
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Through Hole
• Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
• Base Number: MPSA05