2N5088 - BJT NPN Silicon Amplifier Transistor 30V 0.05A TO-92

Specifications - Maximum Ratings

  • VCEO: 30 VDC
  • VCBO: 35 VDC
  • VEBO: 3.0 VDC
  • IC: 50 mA DC
  • Total device dissipation @ TA = 25°C: 625 mW (5 mW/°C)
  • Total device dissipation @ TC = 25°C: 1.5 Watts (12 mW/°C)
  • Operating and Storage Junction Temp. Range: -55 to +150°C

    • Product Identification

    Manufacturer Series:2N5088
    Product Type:Bipolar Small Signal

    Dimensions & Appearance

    Mounting:Through Hole
    Width:4.19 mm
    Height:5.33 mm
    Length:5.21 mm

    Operating conditions

    Maximum Operating Temperature:150°C
    Minimum Operating Temperature:-55°C

    Packaging

    Packaging:Bulk
    Package:TO-92-3

    Features

    Number of Elements per Chip:1
    Maximum Collector Current:0.05A
    Pins:3
    Transistor Polarity:NPN
    Maximum Emitter Base Voltage:3V
    Maximum Collector Emitter Voltage:30 V
    Maximum Collector Base Voltage:35 V
    Maximum Operating Frequency:50MHz
    Maximum Collector Emitter Saturation Voltage:0.5V @ 1mA @ 10mA
    Minimum DC Current Gain:300 @ .05A
    Configuration:Single
    Power Dissipation:625mW
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